MMBT2369A【
NPN Transistors/ 200mW / SOT-23】
NPN Silicon Epitaxial Planar
Transistors
Features ◆ For Switching and Amplifier Applications PACKAGE OUTLINE
Absolute Maximum Ratings【TA=25℃】
Parameter
Collector Base Voltage
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation
Derate above 25 ℃
DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage
Collector Cutoff Current
VCE = 1 V, IC = 10 mA VCE=0.
35V, IC=10mA VCE=0.
35V, IC=10mA,TA=-55℃ VCE=0.
4V, IC=30mA VCE=1.
0V, IC=100mA
IC=10mA, IB=1mA IC=10mA, IB=1mA,TA=+125℃
IC=30mA, IB=3.
0mA IC=100mA, IB=10mA IC=10mA, IB=1mA IC=10mA, IB=1mA,TA=-55℃ ...