2N5954

2N5951 : 2N5951 — N-Channel RF Amplifier September 2007 2N5951 N-Channel RF Amplifier • This device is designed primarily for electronic switching applications such as low on resistance analog switching. • Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The facto.

2N5951 : The CENTRAL SEMICONDUCTOR 2N5949 Series devices are silicon N-Channel JFETs designed for switching, RF amplifier and mixer applications where low capacitance is desired. MARKING: FULL PART NUMBER TO-92-18R CASE MAXIMUM RATINGS: (TA=25°C) Gate-Source Voltage Drain-Gate Voltage Gate Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VGS VDG IG PD TJ, Tstg 30 30 10 360 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5949 2N5951 SYMBOL TEST CONDITIONS MIN MAX MIN MAX IGSS VGS=15V, VDS=0 - 1.0 - 1.0 IGSS VGS=15V, VDS=0, TA=100°C - 200 - 200 IDSS VDS=15V, VGS=0 12 18 7.0 13 BVGSS IG=1.0μA 30 - 30 - VGS VDS=15V, ID=1.2mA.

2N5952 : 2N5952 2N5952 N-Channel RF Ampifier • This device is designed primarily for electronic switching applications such as low on resistance analog switching. • Sourced from process 50. 1 TO-92 Absolute Maximum Ratings * TC=25°C unless otherwise noted 1. Gate 2. Source 3. Drain Symbol Parameter Value Units VDG Drain-Gate Voltage 30 VGS Gate-Source Voltage -30 IGF Forward Gate Current 10 TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. V V mA °C NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are stea.

2N5952 : The CENTRAL SEMICONDUCTOR 2N5949 Series devices are silicon N-Channel JFETs designed for switching, RF amplifier and mixer applications where low capacitance is desired. MARKING: FULL PART NUMBER TO-92-18R CASE MAXIMUM RATINGS: (TA=25°C) Gate-Source Voltage Drain-Gate Voltage Gate Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VGS VDG IG PD TJ, Tstg 30 30 10 360 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5949 2N5951 SYMBOL TEST CONDITIONS MIN MAX MIN MAX IGSS VGS=15V, VDS=0 - 1.0 - 1.0 IGSS VGS=15V, VDS=0, TA=100°C - 200 - 200 IDSS VDS=15V, VGS=0 12 18 7.0 13 BVGSS IG=1.0μA 30 - 30 - VGS VDS=15V, ID=1.2mA.

2N5953 : 2N5953 — N-Channel RF Amplifier September 2007 2N5953 N-Channel RF Amplifier • This device is designed primarily for electronic switching applications such as low on resistance analog switching. • Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The facto.

2N5953 : The CENTRAL SEMICONDUCTOR 2N5949 Series devices are silicon N-Channel JFETs designed for switching, RF amplifier and mixer applications where low capacitance is desired. MARKING: FULL PART NUMBER TO-92-18R CASE MAXIMUM RATINGS: (TA=25°C) Gate-Source Voltage Drain-Gate Voltage Gate Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VGS VDG IG PD TJ, Tstg 30 30 10 360 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5949 2N5951 SYMBOL TEST CONDITIONS MIN MAX MIN MAX IGSS VGS=15V, VDS=0 - 1.0 - 1.0 IGSS VGS=15V, VDS=0, TA=100°C - 200 - 200 IDSS VDS=15V, VGS=0 12 18 7.0 13 BVGSS IG=1.0μA 30 - 30 - VGS VDS=15V, ID=1.2mA.

2N5954 : The CENTRAL SEMICONDUCTOR 2N5954 and 2N6372 series devices are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEV VCER VCEO VEBO IC IB PD TJ, Tstg JC 2N5954 2N6372 90 90 85 80 2N5955 2N6373 70 70 65 60 5.0 6.0 2.0.

2N5954 : ·With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area ·Complement to type 2N6372/6373/6374 APPLICATIONS ·Designed for driver circuits,switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5954 2N5955 2N5956 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5954 VCBO Collector-base voltage 2N5955 2N5956 2N5954 VCEO Collector-emitter voltage 2N5955 2N5956 VEBO IC IB PD Tj Tstg Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -90 -70 -50 -80 -60 -40 -5 -.

2N5955 : The CENTRAL SEMICONDUCTOR 2N5954 and 2N6372 series devices are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEV VCER VCEO VEBO IC IB PD TJ, Tstg JC 2N5954 2N6372 90 90 85 80 2N5955 2N6373 70 70 65 60 5.0 6.0 2.0.

2N5955 : 2N5955 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. Bipolar PNP Device. VCEO = 65V IC = 6A 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 1 – Base TO66 (TO213AA) PINOUTS 2 – Emitter Case – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ 4/2.5 (VCE / IC) * .

2N5955 : ·With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area ·Complement to type 2N6372/6373/6374 APPLICATIONS ·Designed for driver circuits,switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5954 2N5955 2N5956 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5954 VCBO Collector-base voltage 2N5955 2N5956 2N5954 VCEO Collector-emitter voltage 2N5955 2N5956 VEBO IC IB PD Tj Tstg Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -90 -70 -50 -80 -60 -40 -5 -.

2N5956 : The CENTRAL SEMICONDUCTOR 2N5954 and 2N6372 series devices are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEV VCER VCEO VEBO IC IB PD TJ, Tstg JC 2N5954 2N6372 90 90 85 80 2N5955 2N6373 70 70 65 60 5.0 6.0 2.0.

2N5956 : 2N5956 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. Bipolar PNP Device. VCEO = 45V IC = 6A 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 1 – Base TO66 (TO213AA) PINOUTS 2 – Emitter Case – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ 4/3 (VCE / IC) * Ma.

2N5956 : ·With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area ·Complement to type 2N6372/6373/6374 APPLICATIONS ·Designed for driver circuits,switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5954 2N5955 2N5956 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5954 VCBO Collector-base voltage 2N5955 2N5956 2N5954 VCEO Collector-emitter voltage 2N5955 2N5956 VEBO IC IB PD Tj Tstg Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -90 -70 -50 -80 -60 -40 -5 -.

2N5957 : 20 AMP NPN Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx *TC=100°C (W) Package 2N3597 20 40 40 2N6257 20 40 15 2N1936 20 60 10 2N3598 20 60 40 2N3772 20 60 15 2N4210 20 60 20 2N6046 20 60 20 2N5039 20 75 30 2N1937 20 80 10 2N3599 20 80 40 2N4211 20 80 20 2N5303 20 80 15 2N5731 20 80 30 2N5732 20 80 30 2N5038 20 90 50 2N5329 20 90 40 2N5957 20 100 30 2N5959 20 100 30 2N6047 20 100 20 2N5539 20 130 25 2N6048 20 140 20 2N3846 20 200 40 2N3848 20 200 40 2N6688 20 200 20 2N3847 20 300 40 2N3849 .

2N5958 : ISCFdÈWÐ^5WÐ^5 text/html About keyword search: News Contact Employment Site part number search: Home 2N5958 (#23878) RFQ/Sample PNP Transistor Division Lawrence Mil -Spec (none) Shipping (none) Datasheet Qual Data (none) Contact Microsemi Package TO-61(STD) Maximum Electrical Rating Power Dissipation Collector Current Breakdown Voltage Collector -to-Base Voltage Collector to Emitter Open Voltage Emitter to Base Open Symbol Power IC BV(CBO) VCEO BVEBO Max Unit 175 W 20 A 100 V 100 V 8V Electrical Rating Symbol Min Typ Max Unit Collector Emitter Saturation Voltage (IB=0.5 mA, I C=10 mA, TA=25 ºC,300µ s pulse) VCE(sat) 0.5 V DC Current Gain (IC=10 mA, TA=25 ºC,300µ s p.