Main Product Characteristics:
VDSS RDS(on)
500V 0.
41Ω(typ.
)
ID 13A
Features and Benefits:
TO220F
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
SSF13N50F
Marking and pin Assignment
Schematic diagram
Description:
These N-Channel enhancement mode power field effect
transistors are produced using silikron proprietary MOSFET technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche a...