Main Product Characteristics:
VDSS
100V
RDS(on) 20.
5mΩ (typ.
)
ID 45A ①
Features and Benefits:
TO-220
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
SSF1030
Marking and pin Assignment
Schematic diagram
Description:
These N-Channel enhancement mode power field effect
transistors are produced using silikron proprietary MOSFET technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanch...