BR8810MF Rev.
D Oct.
-2015 / Descriptions SOT23-6 N MOS 。 ESD 。 N-channel Double MOSFET in a SOT23-6 Plastic Package.
It is ESD protested.
/ Features ， RDS(on)，。 advanced trench technology to provide excellent RDS(on), low gate charge.
VDSS=20V／VGSS=±12V ID=7A RDS(ON)=16mΩ(typ.
)@VGS=4.
5V RDS(ON)=19mΩ(typ.
)@VGS=2.
5V RDS(ON)=24mΩ(typ.
)@VGS=1.
8V / Applications ，PWM 。 Use as Load Switch or PWM application.
/ Equivalent Circuit DATA SHEET / Pinning **** 1 2 3 6 5 4 / Marking 。See Marking Instructions http://www.
fsbrec.
com 1/9 BR8810MF Rev.
D Oct.
-2015 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Drain-Source Voltage Drain Current - Continuous Drain Current - Con...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)