DC COMPONENTS CO.
, LTD.
R DISCRETE SEMICONDUCTORS
2SA733
TECHNICAL SPECIFICATIONS OF
PNP EPITAXIAL PLANAR
TRANSISTOR
Description
Designed for use in driver stage of AF amplifier applicatioms.
Pinning
1 = Emitter 2 = Collector 3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating
Collector-Base Voltage
VCBO
-60
Collector-Emitter Voltage
VCEO
-50
Emitter-Base Voltage
VEBO
-5
Collector Current
IC -100
Base Current
IB -20
Total Power Dissipation
PD 250
Junction Temperature
TJ +150
Storage Temperature
TSTG -55 to +150
Unit V V V mA mA
mW oC oC
TO-92
.
190(4.
83) .
170(4.
33)
.
190(4.
83) .
170(4.
33)
.
500 (12.
70) Min
2o Typ 2o Typ
(1.
0.
2570)Typ
.
022(0.
56)...