2SC1740
NPN Silicon Epitaxial Planar
Transistor
for switching and AF amplifier applications.
The
transistor is subdivided into four groups Q, R, S and E.
according to its DC current gain.
On special request, these
transistors can be manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25℃)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
1.
Emitter 2.
Collector 3.
Base
TO-92 Plastic Package Weight approx.
0.
19g
Symbol VCBO VCEO VEBO IC Ptot Tj TS
Value 60 50 5 150 300 150
-55 to +150
Unit V V V mA
mW OC OC
Page 1 of 2
7/15/2011
Characteristics at T...