Part Number
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TC58NYG2S0HBAI6 |
Manufacturer
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Toshiba |
Description
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4 GBIT (512M x 8 BIT) CMOS NAND E2PROM |
Published
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Jul 15, 2017 |
Detailed Description
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TC58NYG2S0HBAI6
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
4 GBIT (512M × 8 BIT) CMOS NAND E2PROM
DESCRIP...
|
Datasheet
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TC58NYG2S0HBAI6
|
Overview
TC58NYG2S0HBAI6
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
4 GBIT (512M × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58NYG2S0HBAI6 is a single 1.
8V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048blocks.
The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments.
The Erase operation is implemented in a single block unit (256 Kbytes + 16 Kbytes: 4352 bytes × 64 pages).
The TC58NYG2S0HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and d...
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