Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BC807 BC808
SILICON PLANAR EPITAXIAL
TRANSISTORS
P–N–P
transistor
Marking BC807 = 5D BC807–16 = 5A BC807–25 = 5B BC807-40 = 5C BC808 = 5H BC808–16 = 5E BC808–25 = 5F BC808–40 = 5G
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature Transition frequency at f = 100 MHz
–IC = 10 mA; –VCE = 5 V
–VCES –VCE0 –ICM Ptot Tj
BC807 max.
50 max.
45 max.
max.
max.
1000 250 150
BC808 3...