Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BF820 BF822
SILICON EPITAXIAL
TRANSISTORS
N–P–N
transistors
Marking BF820 = 1V BF822 = 1X
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector–emitter voltage (RBE = 2,7 kW ) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature D.
C.
current gain
IC = 25 mA; VCE = 20 V Feedback capacitance at f = 1 MHz
IC = 0; VCE = 30 V Transition frequency at f = 35 MHz
IC = 10mA; VCE =...