Part Number
|
K6R4008V1B-L |
Manufacturer
|
Samsung semiconductor |
Description
|
512K x8 Bit High Speed Static RAM |
Published
|
Jul 18, 2017 |
Detailed Description
|
www.DataSheet4U.com
K6R4008V1B-C/B-L, K6R4008V1B-I/B-P
PRELIMINARY CMOS SRAM
Document Title
512Kx8 Bit High Speed Stat...
|
Datasheet
|
K6R4008V1B-L
|
Overview
www.
DataSheet4U.
com
K6R4008V1B-C/B-L, K6R4008V1B-I/B-P
PRELIMINARY CMOS SRAM
Document Title
512Kx8 Bit High Speed Static RAM(3.
3V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
RevNo.
History Rev.
0.
0 Initial release with Design Target.
Draft Data Jan.
1st, 1997
Rev.
1.
0
Release to Preliminary Data Sheet.
1.
1.
Replace Design Target to Preliminary.
Jun.
1st, 1997
Rev.
2.
0
Release to Final Data Sheet.
2.
1.
Delete Preliminary.
2.
2.
Add 30pF capacitive in test load.
2.
3.
Relax DC characteristics.
Item Previous
ICC
10ns
170mA
12ns
160mA
15ns
150mA
ISB f=max.
40mA
ISB1 f=0 10 / 1mA
IDR
VDR=3.
0V
0.
9mA
Current 205mA 200mA 195mA 50mA 1...
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