Part Number
|
M28F201 |
Manufacturer
|
STMicroelectronics |
Description
|
2 Mb FLASH MEMORY |
Published
|
Jul 26, 2017 |
Detailed Description
|
M28F201
2 Mb (256K x 8, Chip Erase) FLASH MEMORY
5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70n...
|
Datasheet
|
M28F201
|
Overview
M28F201
2 Mb (256K x 8, Chip Erase) FLASH MEMORY
5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Active Current: 15mA typical – Stand-by Current: 10µA typical 10,000 PROGRAM/ERASE CYCLES INTEGRATED ERASE/PROGRAM-STOP TIMER OTP COMPATIBLE PACKAGES and PINOUTS ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: F4h
PLCC32 (K)
Figure 1.
Logic Diagram
TSOP32 (N) 8 x 20 mm
DESCRIPTION
The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte.
It is organised as 256K bytes.
It uses a comman...
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