Elektronische Bauelemente
SS8550W
PNP Silicon
General Purpose
Transistor
RoHS Compliant Product
FEATURES
Power dissipation PCM : 0.
2 W
Collector Current ICM : -1.
5 A
Collector-base voltage V(BR)CBO : - 40 V
Operating & storage junction temperature Tj, Tstg : - 55OC ~ + 150O C
V
1 2
3
A L
3
Top View
12
G
Collector 3
1 Base
2 Emitter
BS
Marking : Y2
C
D
HK
J
SOT-323 Dim Min Max
A 1.
800 2.
200 B 1.
150 1.
350 C 0.
800 1.
000 D 0.
300 0.
400 G 1.
200 1.
400 H 0.
000 0.
100 J 0.
100 0.
250 K 0.
350 0.
500 L 0.
590 0.
720 S 2.
000 2.
400 V 0.
280 0.
420 All Dimension in mm
ELECTRICAL CHARACTERISTICS ( Tamp.
=25OC unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter b...