Elektronische Bauelemente
MMBTA42W
NPN Silicon
General Purpose
Transistor
FEATURES
· Plastic-Encapsulate
Transistors · Power dissipation & Collector current
Pcm: 0.
2W Icm: 0.
3A
· High voltage V(BR): 300V
2.
Base
3.
Collector 1.
Emitter
RoHS Compliant Product
A L
Top View
BS
VG
C D HK
SOT-323 Dim Min Max
A 1.
800 2.
200 B 1.
150 1.
350 C 0.
800 1.
000 D 0.
300 0.
400 G 1.
200 1.
400 H 0.
000 0.
100 J 0.
100 0.
250 K 0.
350 0.
500 J L 0.
590 0.
720 S 2.
000 2.
400 V 0.
280 0.
420 All Dimension in mm
č ¥ ĎELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO Ic= 100 A IE=0
300
Collector-emitter breakdown voltage
...