Production specification
NPN SILICON EPITAXIAL
TRANSISTOR POWER MINI MOLD
2SC3357
FEATURES
Pb
z Low Noise and High Gain
Lead-free
NF = 1.
1 dB TYP.
, Ga = 8.
0 dB TYP.
@VCE = 10 V,
IC = 7 mA, f = 1.
0 GHz
NF = 1.
8 dB TYP.
, Ga = 9.
0 dB TYP.
@VCE = 10 V,
z Large PT in Small Package
PT : 2 W with 16 cm2*0.
7 mm Ceramic Substrate.
APPLICATIONS
z The 2SC3357 is an
NPN silicon epitaxial
transistor designed For low noise amplifier at VHF, UHF and CATV band.
z It has large dynamic range and good current characteristic.
ORDERING INFORMATION
Type No.
Marking
2SC3357
RH/RF/RE
Package Code SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
VCBO
Collector-Base V...