2SA1091(3CG1091)
PNP /SILICON
PNP TRANSISTOR
:,,/Purpose: High voltage control,
plasma display, nixie tube driver, cathode ray tube brightness control applications.
:,,/Features: High voltage, low saturation
voltage, small collector output capacitance.
/Absolute maximum ratings(Ta=25℃)
Symbol
Rating
Unit
VCBO
-300
V
VCEO
-300
V
VEBO
-8.
0
V
IC
-100
mA
IB -20 mA
PC 400 mW
Tj 150 ℃
Tstg -55~150 ℃
/Electrical characteristics(Ta=25℃)
Symbol
Test condition
VCBO VCEO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob
IC=-0.
1mA IC=-1.
0mA VCB=-300V VEB=-8.
0V VCE=-10V VCE=-10V IC=-20mA IC=-20mA VCE=-10V VCB=-20V IE=0
IE=0 IB=0 IE=0 IC=0 IC=-20mA IC=-1.
0mA IB=-2.
0mA IB...