2SA1376(3CG1376)
PNP /SILICON
PNP TRANSISTOR
: 。
Purpose: General purpose amplifier applications requiring high breakdown voltages.
: ，, 2SC3478(3DG3478)。 Features: High breakdown voltage, good hFE linearity, complementary to 2SC3478(3DG3478).
/Absolute maximum ratings(Ta=25℃)
Symbol
Rating
Unit
VCBO
-200
V
VCEO
-180
V
VEBO
-5.
0
V
IC
-100
mA
ICP
-200
mA
IB -20 mA
PC 750 mW
Tj 150 ℃
Tstg -55～150 ℃
/Electrical characteristics(Ta=25℃)
Symbol
Test condition
ICBO IEBO hFE VCE(sat) VBE(sat) VBE fT Cob ton toff
VCB=-200V
IE=0
VEB=-4.
0V
IC=0
VCE=-10V IC=-50mA IC=-50mA VCE=-10V VCE=-10V
IC=-10mA IB=-5.
0mA IB=-5.
0mA IC=-10mA IE=10mA
VCB=-30V IF=0 f=1.
0MHz
...