2SA1585
PNP Silicon Epitaxial Planar
Transistor
The
transistor is subdivided into two groups, Q and R, according to its DC current gain.
On special request, these
transistors can be manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range 1) Single pulse Pw = 10 ms
Characteristics at Ta = 25 OC
Parameter DC Current Gain
at -VCE = 2 V, -IC = 100 mA Current Gain Group
Collector Base Breakdown Voltage at -IC = 50 µA
Collector Emitter Breakdown Voltage at -IC = 1 mA
Emitter Base Breakdown Voltage at -IE = 50...