2SC2001
NPN Silicon Epitaxial Planar
Transistor
for switching and AF amplifier applications.
The
transistor is subdivided into three groups, O, Y and G, according to its DC current gain.
On special request, these
transistors can be manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 oC)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
1.
Emitter 2.
Collector 3.
Base
TO-92 Plastic Package Weight approx.
0.
19g
Symbol VCBO VCEO VEBO IC Ptot Tj TS
Value 30 25 5 700 600 150
-55 to +150
Unit V V V mA
mW OC OC
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7/15/2011
Characteristics at ...