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V20DM120C-M3, V20DM120CHM3
Vishay General Semiconductor
Dual TMBS® (Trench MOS Barrier
Schottky) Rectifier
Ultra Low VF = 0.
55 V at IF = 5 A
eSMP® Series SMPD (TO-263AC)
K
1
2 Top View
Bottom View
Anode 1 Anode 2
K Cathode
DESIGN SUPPORT TOOLS AVAILABLE
3D 3D
3D Models
FEATURES • Trench MOS
Schottky technology • Very low profile - typical height of 1.
7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C • AEC-Q101 qualified available:
- Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance
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