www.
vishay.
com
V20M120C, VI20M120C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.
55 V at IF = 5 A
TO-220AB
TMBS ®
TO-262AA K
3 2 1
V30M120C
PIN 1
PIN 2
PIN 3
CASE
3 2 1
VI30M120C
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
2 x 10 A 120 V 120 A
VF at IF = 10 A
0.
64 V
TJ max.
Package
175 °C TO-220AB, TO-262AA
Diode variations
Dual common cathode
FEATURES • Trench MOS
Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max.
10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: for definitions of compliance
please see ww...