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V30D202C
Vishay General Semiconductor
Dual High-Voltage TMBS® (Trench MOS Barrier
Schottky) Rectifier
eSMP® Series SMPD (TO-263AC)
K
1
2 Top View
Bottom View
V30D202C
PIN 1
K
PIN 2
HEATSINK
ADDITIONAL RESOURCES
3D 3D
3D Models
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15.
0 A
VRRM IFSM VF at IF = 15.
0 A (TA = 125 °C)
200 V 260 A 0.
66 V
TJ max.
175 °C
Package
SMPD (TO-263AC)
Circuit configuration
Common cathode
FEATURES • Trench MOS
Schottky technology generation 2 Available • Very low profile - typical height of 1.
7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020,
LF m...