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V30M120CxM3, VI30M120CxM3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.
52 V at IF = 5 A
TO-220AB
TMBS ®
TO-262AA K
V30M120C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
VI30M120C
3 2 1
PIN 1
PIN 2
PIN 3
K
FEATURES • Trench MOS
Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max.
10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: For definitions of compliance
please see www.
vishay.
com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse batter...