NGTB50N60FLWG
IGBT
This Insulated Gate Bipolar
Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
Features
• Low Saturation Voltage using Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • Soft Fast Reverse Recovery Diode • Optimized for High Speed Switching • 5 ms Short−Circuit Capability • These are Pb−Free Devices
Typical Applications
• Solar Inverters • Uninterruptible Power Supplies (UPS)
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage Collector current
@ TC...