PH2729-65M
Radar Pulsed Power
Transistor 65W, 2.
7-2.
9 GHz, 100µs Pulse, 10% Duty
Features
NPN silicon microwave power
transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic metal/ceramic package RoHS compliant
Outline Drawing
Rev.
V2
Absolute Maximum Ratings at 25°C
Parameter
Sym- Rating Units bol
Collector-Emitter Voltage Emitter-Base Voltage
Collector Current (Peak)
VCES
VEBO IC
65
3.
0 8.
0
V
V A
Power Dissipation @ +25°C Storage Temperature
Junction Temperature
PTOT TSTG
TJ
330
-65 to +200 200...