MMIS70R900P Datasheet MMIS70R900P 700V 0.
9Ω N-channel MOSFET  Description MMIS70R900P is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge.
It will provide much high efficiency by using optimized charge coupling technology.
These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.
 Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 750 0.
9 3 5 15 Unit V Ω V A nC  Package & Internal Circuit D G DS G S  Features  Low Power Loss by High Speed Switching and Low On-Resistance  100% Avalanche Tested  Green Package – Pb Free Plating, Halogen Free ...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)