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T2 T4-EA-13170 FK8V03060L Silicon N-channel MOS FET For lithium-ion secondary battery protection circuit For DC-DC Converter  Features  Low drain-source On-state Resistance RDS(on) typ.
= 22 m (VGS = 4.
5 V)  High-speed switching : Qg = 3.
8 nC  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)  Marking Symbol: 3F  Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Drain-source Voltage VDS 33 V Gate-source Voltage Drain Current (Steady State) *1 Drain Current (t = 10 s) *1 Drain Current (Pulsed) *1,*2 Source Current (Pulsed) (Body Diode...

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