Part Number
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S10H038R |
Manufacturer
|
SI-TECH |
Description
|
N-Channel MOSFET |
Published
|
Sep 23, 2017 |
Detailed Description
|
SI-TECH SEMICONDUCTOR CO.,LTD S10H038R/S
N-Channel MOSFET
Features
█ 100V,160A,Rds(on)(typ)=3.8mΩ @Vgs=10V █ High Rugg...
|
Datasheet
|
S10H038R
|
Overview
SI-TECH SEMICONDUCTOR CO.
,LTD S10H038R/S
N-Channel MOSFET
Features
█ 100V,160A,Rds(on)(typ)=3.
8mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Avalanche Tested █ Improved dv/dt Capability █ Split-Gate MOS Technology
General Description
This Power MOSFET is produced using Si-Tech’s advanced Split-Gate MOS Technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM VGS EAS
PD
...
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