Part Number
|
BZT55C20 |
Manufacturer
|
TEMIC Semiconductors |
Description
|
Silicon Epitaxial Planar Z-Diodes |
Published
|
Mar 23, 2005 |
Detailed Description
|
TELEFUNKEN Semiconductors
BZT55C...
Silicon Epitaxial Planar Z–Diodes
Features
D Very sharp reverse characteristic D ...
|
Datasheet
|
BZT55C20
|
Overview
TELEFUNKEN Semiconductors
BZT55C.
.
.
Silicon Epitaxial Planar Z–Diodes
Features
D Very sharp reverse characteristic D Low reverse current level D Very high stability D Low noise D Available with tighter tolerances
Applications
Voltage stabilization
94 9373
Absolute Maximum Ratings
Tj = 25_C Parameter Power dissipation Z–current Junction temperature Storage temperature range Test Conditions RthJAx300K/W Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 –65.
.
.
+175 Unit mW mA °C °C
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.
6mm Symbol RthJA Value 500 Unit K/W
Characteristics
Tj = 25_C Parameter Forward voltage Test Conditions IF=20...
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