Features • Single Supply for Read and Write: 2.
7 to 3.
6V (BV), 3.
0 to 3.
6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer • Sector Architecture – One 16-Kbyte Boot Block with Programming Lockout – Two 8-Kbyte Parameter Blocks – Two Main Memory Blocks (32K, 64K Bytes) • Fast Erase Cycle Time – 10 Seconds • Byte-by-byte Programming – 30 µs/Byte Typical • Hardware Data Protection • DATA Polling for End of Program Detection • Low Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49BV/LV001(N)(T) is a 3-volt-only in-system reprogrammable Flash memory.
Its 1 megabit of memory is organized as 131,072 wor...

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