Features • Single Supply for Read and Write: 2.
7 to 3.
6V • Fast Read Access Time – 70 ns • Internal Program Control and Timer • Sector Architecture – One 16K Bytes Boot Block with Programming Lockout – Two 8K Bytes Parameter Blocks – Eight Main Memory Blocks (One 32K Bytes, Seven 64K Bytes) • Fast Erase Cycle Time – 7 Seconds • Byte-by-Byte Programming – 30 µs/Byte Typical • Hardware Data Protection • DATA Polling for End of Program Detection • Low Power Dissipation – 15 mA Active Current – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49BV040A is a 2.
7-volt-only in-system reprogrammable Flash Memory.
Its 4 megabits of memory is organized as 524,288 words by 8 b...

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