AT49BV8192

Features • Low Voltage Operation – 2.7V Read – 5V Program/Erase • Fast Read Access Time - 120 ns • Internal Erase/Program Control • Sector Architecture – One 8K Words (16K bytes) Boot Block with Programming Lockout – Two 8K Words (16K bytes) Parameter Blocks – One 488K Words (976K bytes) Main Memory Array Block • Fast Sector Erase Time - 10 seconds • Word-By...