Philips Semiconductors
Product Specification
PowerMOS
transistor
BUK444-800A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power
transistor in a plastic full-pack envelope.
The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK444 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX.
-800A 800 1.
4 30 6.
0 MAX.
-800B 800 1.
2 30 8.
0 UNIT V A W Ω
PINNING - SOT186
PIN 1 2 3 gate drain source DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
d
g
case isolated...