Philips Semiconductors
Product specification
PowerMOS
transistor
BUK454-60H
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power
transistor in a plastic envelope.
The device is intended for use in automotive applications, Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX.
60 41 125 175 38 UNIT V A W ˚C mΩ
PINNING - TO220AB
PIN 1 2 3 tab gate drain source drain DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
d
g
...