Philips Semiconductors
Product Specification
PowerMOS
transistor
BUK455-200A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power
transistor in a plastic envelope.
The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK455 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; MAX.
-200A 200 14 125 175 0.
23 MAX.
-200B 200 13 125 175 0.
28 UNIT V A W ˚C Ω
PINNING - TO220AB
PIN 1 2 3 tab gate drain source drain DESCRIPTI...