Philips Semiconductors
Product Specification
PowerMOS
transistor
BUK456-800A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power
transistor in a plastic envelope.
The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK456 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX.
-800A 800 4 125 3 MAX.
-800B 800 3.
5 125 4 UNIT V A W Ω
PINNING - TO220AB
PIN 1 2 3 tab gate drain source drain DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
d
g
1 23
s
LIMITING...