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Part Number
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BUK475-200A |
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Manufacturer
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NXP |
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Title
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PowerMOS transistor |
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Description
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N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device...
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Features
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) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction temperature C...
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Published
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Mar 23, 2005 |
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Datasheet
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BUK475-200A PDF File
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Features
) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Ths = 25 ˚C Ths = 100 ˚C Ths = 25 ˚C Ths = 25 ˚C MIN. - 55 -200A 7.6 4.8 30 30 150 150 MAX. 200 200 30 -200B...
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