Philips Semiconductors
Product Specification
PowerMOS
transistor Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power
transistor in a plastic full-pack envelope.
The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.
BUK542-100A/B
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK542 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance; VGS = 5 V MAX.
-100A 100 6.
3 22 0.
28 MAX.
-100B 100 5.
6 22 0.
35 UNIT V A W Ω
PINNING - SOT186
PIN 1 2 3 gate drain source DESCRIPT...