Part Number
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EDB8164B4PT |
Manufacturer
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Micron Technology |
Description
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LPDDR2 SDRAM |
Published
|
Nov 5, 2017 |
Detailed Description
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216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
LPDDR2 SDRAM
EDB8164B4PR, EDB8164B4PK, EDB8164B4PT, EDBA164B2...
|
Datasheet
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EDB8164B4PT
|
Overview
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
LPDDR2 SDRAM
EDB8164B4PR, EDB8164B4PK, EDB8164B4PT, EDBA164B2PR
Features
• Ultra-low-voltage core and I/O power supplies • Frequency range
– 533 MHz (data rate: 1066 Mb/s/pin) • 4n prefetch DDR architecture • 8 internal banks for concurrent operation • Multiplexed, double data rate, command/address
inputs; commands entered on each CK_t/CK_c edge • Bidirectional/differential data strobe per byte of data (DQS_t/DQS_c) • Programmable READ and WRITE latencies (RL/WL) • Burst length: 4, 8, and 16 • Per-bank refresh for concurrent operation • Auto temperature-compensated self refresh (ATCSR) by built-in temperature sensor • Partial-array ...
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