Philips Semiconductors
Product Specification
PowerMOS
transistor Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power
transistor in a plastic envelope.
The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.
BUK555-60A/B
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK555 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX.
-60A 60 39 125 175 0.
042 MAX.
-60B 60 35 125 175 0.
055 UNIT V A W ˚C Ω
PINNING - TO220AB
PIN 1 2 3 tab...