Philips Semiconductors
Product Specification
PowerMOS
transistor Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power
transistor in a plastic envelope.
The device is intended for use in automotive and general purpose switching applications.
BUK556-60H
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX.
60 60 150 175 22 UNIT V A W ˚C mΩ
PINNING - TO220AB
PIN 1 2 3 tab gate drain source drain DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
d
g
1 23
s
LIMITING VALUES
Limiting values in accordance with the Abso...