Philips Semiconductors
Product Specification
PowerMOS
transistor Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power
transistor in a plastic full-pack envelope.
The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.
BUK573-60A/B
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK573 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance; VGS = 5 V MAX.
-60A 60 13 25 0.
085 MAX.
-60B 60 12 25 0.
1 UNIT V A W Ω
PINNING - SOT186A
PIN 1 2 3 gate drain source DESCRIPTION
P...