Philips Semiconductors
Product specification
PowerMOS
transistor Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power
transistor in a plastic envelope suitable for surface mount applications.
The device is intended for use in automotive and general purpose switching applications.
BUK583-60A
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX.
60 3.
2 1.
8 150 0.
10 UNIT V A W ˚C Ω
PINNING - SOT223
PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION
PIN CONFIGURATION
4
SYMBOL
d
g
1
2
3
s
LIMITING VALU...