Philips Semiconductors
Product specification
Insulated Gate Bipolar
Transistor Protected Logic-Level IGBT
GENERAL DESCRIPTION
Protected N-channel logic-level insulated gate bipolar power
transistor in a plastic envelope, intended for automotive ignition applications.
The device has built-in zener diodes providing active collector voltage clamping and ESD protection up to 2 kV.
BUK856-400 IZ
QUICK REFERENCE DATA
SYMBOL PARAMETER V(CL)CER VCEsat IC Ptot ECERS Collector-emitter clamp voltage Collector-emitter on-state voltage Collector current (DC) Total power dissipation Clamped energy dissipation MIN.
TYP.
MAX.
UNIT 350 400 500 2.
2 20 100 300 V V A W mJ
PINNING - TO220AB
PIN 1 2 3 tab ga...