Philips Semiconductors
Product specification
TrenchMOS
transistor Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power
transistor in a plastic envelope available in TO220AB and SOT404 .
Using ’trench’ technology which features very low on-state resistance.
It is intended for use in automotive and general purpose switching applications.
BUK95180-100A BUK96180-100A
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V VGS = 10 V MAX.
100 11 54 175 180 173 UNIT V A W ˚C mΩ mΩ
PINNING TO220AB & SOT404
PIN 1 2 3 DESCRI...