Philips Semiconductors
Product specification
TrenchMOS™
transistor Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power
transistor in a plastic envelope suitable for surface mounting.
The device features very low on-state resistance and has integral zener diodes giving ESD protection.
It is intended for use in automotive and general purpose switching applications.
BUK9880-55
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX.
55 7.
5 1.
8 150 80 UNIT V A W ˚C mΩ
PINNING - SOT223
PIN 1 2 3 4 gate drain source drain...