LAB
MECHANICAL DATA Dimensions in mm
10.
2
SEME
BUL52BFI
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED
NPN SILICON POWER
TRANSISTOR
3.
6 Dia.
6.
3
15.
1
Designed for use in electronic ballast applications • • • • SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING
1 2 3
1.
3 14.
0
0.
85
2.
54 2.
54
FEATURES
• Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
• Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
• Triple Guard Rings for improved control of high voltages.
ISOLATED TO220
Pin 1 – Base Pin ...