BULD125KC
NPN SILICON
TRANSISTOR WITH INTEGRATED DIODE
Copyright © 1997, Power Innovations Limited, UK MAY 1994 - REVISED SEPTEMBER 1997
q
Designed Specifically for High Frequency Electronic Ballasts Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability Diode trr Typically 1 µs Tightly Controlled
Transistor Storage Times Voltage Matched Integrated
Transistor and Diode Characteristics Optimised for Cool Running Diode-
Transistor Charge Coupling Minimised to Enhance Frequency Stability
B C E
TO-220 PACKAGE (TOP VIEW)
q
1 2 3
q q q
Pin 2 is in electrical contact with the mounting base.
MDTRACA
q q
device symbol
C
description
The new BULDxx range of
transistors have been design...