BULD25D, BULD25DR, BULD25SL
NPN SILICON
TRANSISTOR WITH INTEGRATED DIODE
Copyright © 1997, Power Innovations Limited, UK JULY 1994 - REVISED SEPTEMBER 1997
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Designed Specifically for High Frequency Electronic Ballasts Integrated Fast trr Anti-parallel Diode, Enhancing Reliability Diode trr Typically 500 ns New Ultra Low-Height SOIC Power Package Tightly Controlled
Transistor Storage Times Voltage Matched Integrated
Transistor and Diode Characteristics Optimised for Cool Running
B B NC NC E
D PACKAGE (TOP VIEW) 1 2 3 4 8 7 6 5
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C C C C
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NC - No internal connection
SL PACKAGE (TOP VIEW) 1 2 3
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Diode-
Transistor Charge Coupling Minimised to Enhance Frequency Stability Custo...