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BUP306D

Part Number BUP306D
Manufacturer Siemens Semiconductor Group
Description IGBT
Published Mar 23, 2005
Detailed Description BUP 306D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail cur...
Datasheet BUP306D





Overview
BUP 306D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 G Pin 2 C Pin 3 E Type BUP 306D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE IC Package TO-218 AB Ordering Code Q67040-A4222-A2 1200V 23A Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 23 15 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 46 30 TC = 25 °C TC = 90 °C Diode forward current IF 18 TC = 90 °C Pulsed diode current, tp = 1 ms IFpuls 108 TC = 25 °C Power dissipation Ptot 16...






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