Part Number
|
BUP306D |
Manufacturer
|
Siemens Semiconductor Group |
Description
|
IGBT |
Published
|
Mar 23, 2005 |
Detailed Description
|
BUP 306D
IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail cur...
|
Datasheet
|
BUP306D
|
Overview
BUP 306D
IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1
G
Pin 2
C
Pin 3
E
Type BUP 306D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage
VCE
IC
Package TO-218 AB
Ordering Code Q67040-A4222-A2
1200V 23A
Symbol
Values 1200 1200
Unit V
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 23 15
TC = 25 °C TC = 90 °C
Pulsed collector current, tp = 1 ms
ICpuls
46 30
TC = 25 °C TC = 90 °C
Diode forward current
IF
18
TC = 90 °C
Pulsed diode current, tp = 1 ms
IFpuls
108
TC = 25 °C
Power dissipation
Ptot
16...
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